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NDS8839H

Complementary MOSFET

NDS8839H Features

* N-Channel 5.7A, 30V, RDS(ON)=0.045Ω @ VGS=10V. P-Channel -4.0A, -30V, RDS(ON)=0.09Ω @ VGS=-10V. High density cell design or extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Matched pair for equal input capacitance and power capability . _____

NDS8839H General Description

These Complementary MOSFET half bridge devices are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalan.

NDS8839H Datasheet (350.59 KB)

Preview of NDS8839H PDF

Datasheet Details

Part number:

NDS8839H

Manufacturer:

Fairchild

File Size:

350.59 KB

Description:

Complementary mosfet.

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NDS8839H Complementary MOSFET Fairchild

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