NDS8858H - Complementry MOSFET

Fairchild

Datasheet Details

Part number	NDS8858H
Manufacturer	Fairchild ↗
File Size	350.73 KB
Description	Complementry MOSFET
Datasheet	NDS8858H_FairchildSemiconductor.pdf

These Complementary MOSFET half bridge devices are produced using Fairchild's proprietary, high cell density, DMOS technology.

N-Channel 6.3A, 30V, RDS(ON)=0.035Ω @ VGS=10V. P-Channel -4.8A, -30V, RDS(ON)=0.065Ω @ VGS=-10V. High density cell design or extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Matched pair for equal input capacitance and power capability . ________________________________________________________________________________ V+ P-Gate Vout Vout Vout N -Gate Vout V- Absolute Maximum Ratings Symbol VDSS VGSS ID PD Parameter Drain-Source Volta.

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Published: May 12, 2005 |