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NDS8858H

Complementry MOSFET

NDS8858H Features

* N-Channel 6.3A, 30V, RDS(ON)=0.035Ω @ VGS=10V. P-Channel -4.8A, -30V, RDS(ON)=0.065Ω @ VGS=-10V. High density cell design or extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Matched pair for equal input capacitance and power capability . ____

NDS8858H General Description

These Complementary MOSFET half bridge devices are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalan.

NDS8858H Datasheet (350.73 KB)

Preview of NDS8858H PDF

Datasheet Details

Part number:

NDS8858H

Manufacturer:

Fairchild

File Size:

350.73 KB

Description:

Complementry mosfet.

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NDS8858H Complementry MOSFET Fairchild

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