NDS8852H Datasheet - Fairchild

Complementary MOSFET

NDS8852H Features

* N-Channel 4.3A, 30V, RDS(ON)=0.08Ω @ VGS=10V. P-Channel -3.4A, -30V, RDS(ON)=0.13Ω @ VGS=-10V. High density cell design or extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. Matched pair for equal input capacitance and power capability . ______

NDS8852H General Description

These Complementary MOSFET half bridge devices are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalan.

NDS8852H Datasheet (349.57 KB)

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Datasheet Details

Part number:

NDS8852H

Manufacturer:

Fairchild

File Size:

349.57 KB

Description:

Complementary mosfet.

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NDS8852H Complementary MOSFET Fairchild

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NDS8852H Features

NDS8852H General Description

Datasheet Details

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