NDS8852H mosfet equivalent, complementary mosfet.
N-Channel 4.3A, 30V, RDS(ON)=0.08Ω @ VGS=10V. P-Channel -3.4A, -30V, RDS(ON)=0.13Ω @ VGS=-10V. High density cell design or extremely low RDS(ON). High power and current h.
or CMOS applications when both gates are connected together.
Features
N-Channel 4.3A, 30V, RDS(ON)=0.08Ω @ VGS=10V. P-C.
These Complementary MOSFET half bridge devices are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performan.
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