NDS8858H datasheet, mosfet equivalent, Fairchild

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NDS8858H Features and benefits

N-Channel 6.3A, 30V, RDS(ON)=0.035Ω @ VGS=10V. P-Channel -4.8A, -30V, RDS(ON)=0.065Ω @ VGS=-10V. High density cell design or extremely low RDS(ON). High power and current.

NDS8858H Application

or CMOS applications when both gates are connected together. Features N-Channel 6.3A, 30V, RDS(ON)=0.035Ω @ VGS=10V. P-.

NDS8858H Description

These Complementary MOSFET half bridge devices are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performan.

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