7.2A, 30V. RDS(ON) = 0.035Ω @ VGS = 10V RDS(ON) = 0.05Ω @ VGS = 4.5V. High density cell design for extremely low RDS(ON). High power and current handling capability in a .

such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients.

Power SOT N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide supe.

NDT451

NDT451N

NDT452AP

NDT452P

NDT453N

NDT454P

NDT455N

NDT456P

NDT410EL

NDT014

NDT014L

NDT01N60

NDT01N60T1G