NDT455N N-Channel Enhancement Mode Field Effect Transistor

Fairchild

Description

July 1996 NDT455N N-Channel Enhancement Mode Field Effect Transistor General .
These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS techno.

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Datasheet Specifications

Part number: NDT455N
Manufacturer: Fairchild
File Size: 228.17 KB
Datasheet: NDT455N_FairchildSemiconductor.pdf
Description: N-Channel Enhancement Mode Field Effect Transistor

Features

* 11.5 A, 30 V. RDS(ON) = 0.015 Ω @ VGS = 10 V RDS(ON) = 0.02 Ω @ VGS = 4.5 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. ________________________________________________________________________________ D D

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NDT455N N-Channel Enhancement Mode Field Effect Transistor Fairchild

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