NDT455N Datasheet - Fairchild

N-Channel Enhancement Mode Field Effect Transistor

NDT455N Features

* 11.5 A, 30 V. RDS(ON) = 0.015 Ω @ VGS = 10 V RDS(ON) = 0.02 Ω @ VGS = 4.5 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. ________________________________________________________________________________ D D

NDT455N General Description

These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig.

NDT455N Datasheet (228.17 KB)

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Datasheet Details

Part number:

NDT455N

Manufacturer:

Fairchild

File Size:

228.17 KB

Description:

N-channel enhancement mode field effect transistor.

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NDT455N N-Channel Enhancement Mode Field Effect Transistor Fairchild

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NDT455N Features

NDT455N General Description

Datasheet Details

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Description:

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