NDT456P - P-Channel Enhancement Mode Field Effect Transistor

Fairchild

Datasheet Details

Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology..

-7.5 A, -30 V. RDS(ON) = 0.030 Ω @ VGS = -10 V RDS(ON) = 0.045 Ω @ VGS = -4.5 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. ______________________________________________________________________________ D D G D S G S Absolute Maximum Ratings Symbol Parameter TA = 25°C unless otherwise noted NDT456P Units VDSS VGSS ID Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulse.

📁 Related Datasheet

NDT014 - N-Channel MOSFET (VBsemi)
NDT01N60 - N-Channel Power MOSFET (ON Semiconductor)
NDT01N60T1G - N-Channel Power MOSFET (ON Semiconductor)
NDT02N40 - N-Channel Power MOSFET (ON Semiconductor)
NDT02N60Z - N-Channel Power MOSFET (ON Semiconductor)
NDT03N40Z - N-Channel Power MOSFET (ON Semiconductor)
NDT28P - 2Gb (x8) DDR3L Synchronous DRAM (Insignis)
NDT2955 - P-Channel Enhancement Mode Field Effect Transistor (ON Semiconductor)

📌 All Tags

Fairchild NDT456P-like datasheet

NDT456P Stock/Price