NDT456P P-Channel Enhancement Mode Field Effect Transistor

Fairchild

Description

December 1998 NDT456P P-Channel Enhancement Mode Field Effect Transistor General .
Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

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Datasheet Specifications

Part number: NDT456P
Manufacturer: Fairchild
File Size: 243.34 KB
Datasheet: NDT456P_FairchildSemiconductor.pdf
Description: P-Channel Enhancement Mode Field Effect Transistor

Features

* -7.5 A, -30 V. RDS(ON) = 0.030 Ω @ VGS = -10 V RDS(ON) = 0.045 Ω @ VGS = -4.5 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. ______________________________________________________________________________ D

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NDT456P P-Channel Enhancement Mode Field Effect Transistor Fairchild

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