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BS270 Datasheet - Fairchild Semiconductor

N-Channel Enhancement Mode Field Effect Transistor

BS270 Features

* 400mA, 60V. RDS(ON) = 2Ω @ VGS = 10V. High density cell design for low RDS(ON). Voltage controlled small signal switch. Rugged and reliable. High saturation current capability. ________________________________________________________________________________ D G S Absolute Maximum Ratings Symbol

BS270 General Description

These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applica.

BS270 Datasheet (348.17 KB)

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Datasheet Details

Part number:

BS270

Manufacturer:

Fairchild Semiconductor

File Size:

348.17 KB

Description:

N-channel enhancement mode field effect transistor.

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BS270 N-Channel Enhancement Mode Field Effect Transistor Fairchild Semiconductor

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