FDB016N04AL7 Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. A pplications Synchronous Rectification for ATX / Server / Tele PSU Battery Protection Circuit Motor drives and Uninterruptible Power Supplies 123 567 4 D2-PAK (TO-263) 1. Source D(Pin4, tab) G (Pin1)...
FDB016N04AL7 Key Features
- RDS(on) = 1.16 mW (Typ.) @ VGS = 10 V, ID = 80 A
- Fast Switching Speed
- Low Gate Charge
- High Performance Trench Technology for Extremely Low RDS(on)
- High Power and Current Handling Capability
- RoHS pliant
- Synchronous Rectification for ATX / Server / Tele PSU
- Battery Protection Circuit
- Motor drives and Uninterruptible Power Supplies
- Continuous (TC = 25oC, Silicon Limited)