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FDMS2734 - N-Channel UltraFET Trench MOSFET

Description

Max rDS(on) = 122m: at VGS = 10V, ID = 2.8A Max rDS(on) = 130m: at VGS = 6V, ID = 1.7A Low Miller Charge Optimized efficiency at high frequencies RoHS Compliant UItraFET devices combine characteristics that enable benchmark efficiency in power conv

Features

  • General.

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FDMS2734 N-Channel UltraFET Trench® MOSFET March 2011 FDMS2734 N-Channel UltraFET Trench® MOSFET 250V, 14A, 122m: Features General Description „ Max rDS(on) = 122m: at VGS = 10V, ID = 2.8A „ Max rDS(on) = 130m: at VGS = 6V, ID = 1.7A „ Low Miller Charge „ Optimized efficiency at high frequencies „ RoHS Compliant UItraFET devices combine characteristics that enable benchmark efficiency in power conversion applications. Optimized for rDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters.
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