FDMS3660AS datasheet, mosfet equivalent, Fairchild Semiconductor

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FDMS3660AS Features and benefits

Q1: N-Channel
* Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A
* Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A Q2: N-Channel
* Max rDS(on) = 1.8 mΩ at VGS = 10 V.

FDMS3660AS Application

* Computing
* Communications
* General Purpose Point of Load
* Notebook VCORE Pin 1 Pin.

FDMS3660AS Description

This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFETTM (Q2) h.

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