FDMS3660AS Datasheet MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FDMS3660AS PowerTrench® Power Stage FDMS3660AS PowerTrench® Power Stage Asymmetric Dual N-Channel.

Datasheet Details

Part number	FDMS3660AS
Manufacturer	Fairchild (now onsemi)
File Size	389.11 KB
Description	MOSFET
Datasheet	FDMS3660AS-FairchildSemiconductor.pdf

General Description

This device includes two specialized N-Channel MOSFETs in a dual PQFN package.

The switch node has been internally connected to enable easy placement and routing of synchronous buck converters.

The control MOSFET (Q1) and synchronous SyncFETTM (Q2) have been designed to provide optimal power efficiency.

Key Features

Q1: N-Channel.
Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A.
Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A Q2: N-Channel.
Max rDS(on) = 1.8 mΩ at VGS = 10 V, ID = 30 A.
Max rDS(on) = 2.2 mΩ at VGS = 4.5 V, ID = 27 A.
Low inductance packaging shortens rise/fall times, resulting in lower switching losses.
MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing.
RoHS Compliant July 2013 Gen.

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