FDMS3660AS - MOSFET

Fairchild Semiconductor

FDMS3660AS Datasheet Preview — Preview of FDMS3660AS PDF

Datasheet Details

Part number	FDMS3660AS
Manufacturer	Fairchild ↗ Semiconductor
File Size	389.11 KB
Description	MOSFET
Datasheet	FDMS3660AS-FairchildSemiconductor.pdf

FDMS3660AS Product details

Description

This device includes two specialized N-Channel MOSFETs in a dual PQFN package. Computing Communications General Purpose Point of Load Notebook VCORE Pin 1 Pin

Features

Q1: N-Channel.
Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A.
Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A Q2: N-Channel.
Max rDS(on) = 1.8 mΩ at VGS = 10 V, ID = 30 A.
Max rDS(on) = 2.2 mΩ at VGS = 4.5 V, ID = 27 A.
Low inductance packaging shortens rise/fall times, resulting in lower switching losses.
MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing.
RoHS Compliant July 2013 Gen.

📁 FDMS3660AS Similar Datasheet

FDMS3602S - 25V Asymmetric Dual N-Channel MOSFET (ON Semiconductor)
FDMS3604S - N-Channel MOSFET (ON Semiconductor)
FDMS3606AS - Asymmetric Dual N-Channel MOSFET (ON Semiconductor)
FDMS3672 - N-Channel MOSFET (ON Semiconductor)
FDMS3500 - N-Channel MOSFET (ON Semiconductor)
FDMS3572 - N-Channel MOSFET (ON Semiconductor)
FDMS003N08C - N-Channel MOSFET (ON Semiconductor)
FDMS007N08LC - N-Channel MOSFET (ON Semiconductor)

Other Datasheets by Fairchild Semiconductor

FDMS3660S - Asymmetric Dual N-Channel MOSFET
FDMS3662 - MOSFET
FDMS3664S - MOSFET
FDMS3668S - MOSFET
FDMS3669S - MOSFET
FDMS3600AS - MOSFET

Published: Jan 11, 2017 |