FDN337N Datasheet - Fairchild Semiconductor

N-Channel MOSFET

FDN337N Features

* 2.2 A, 30 V, RDS(ON) = 0.065 Ω @ VGS = 4.5 V RDS(ON) = 0.082 Ω @ VGS = 2.5 V. Industry standard outline SOT-23 surface mount package using proprietary SuperSOTTM-3 design for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON). Exceptional on-resistance a

FDN337N General Description

SuperSOT -3 N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low volta.

FDN337N Datasheet (270.42 KB)

FDN337N Datasheet Preview — Preview of FDN337N PDF

Datasheet Details

Part number:

FDN337N

Manufacturer:

Fairchild Semiconductor

File Size:

270.42 KB

Description:

N-channel mosfet.

📁 Related Datasheet

FDN337N N-Channel MOSFET (ON Semiconductor)

FDN335N N-Channel MOSFET (Fairchild Semiconductor)

FDN335N N-Channel MOSFET (ON Semiconductor)

FDN336P single P-Channel MOSFET (Fairchild Semiconductor)

FDN336P P-Channel MOSFET (ON Semiconductor)

FDN338 FET (DCY)

FDN338P P-Channel MOSFET (Fairchild Semiconductor)

FDN338P P-Channel MOSFET (ON Semiconductor)

FDN339AN N-Channel MOSFET (Fairchild Semiconductor)

FDN339AN N-Channel MOSFET (ON Semiconductor)

TAGS

FDN337N N-Channel MOSFET Fairchild Semiconductor

Image Gallery

FDN337N Features

FDN337N General Description

Datasheet Details

File Size:

Description:

FDN337N Distributor