n-channel mosfet.
* Max rDS(on) =117mΩ at VGS =10V, ID = 3.0A
* Max rDS(on) =126mΩ at VGS = 6V, ID = 2.8A
* Fast switching speed
* High performance trench low rDS(on) techn.
This single N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced UItraFET Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Application
* DC-D.
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