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* -12.6A, -200V, RDS(on) = 0.47Ω @VGS = -10 V Low gate charge ( typical 31 nC) Low Crss ( typical 30 pF) Fast switching 100% avalanche t.

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switch.

FQA12N60

FQA10N60C

FQA10N80

FQA10N80C

FQA10N80C-F109

FQA10N80C_F109

FQA11N40

FQA11N90

FQA11N90-F109

FQA11N90C

FQA11N90C-F109

FQA11N90C_F109

FQA11N90_F109