MRF6V2010NBR1 Overview
Freescale Semiconductor Technical Data Document Number: 1, 5/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for CW large - signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications.
MRF6V2010NBR1 Key Features
- Integrated ESD Protection
- Excellent Thermal Stability
- Facilitates Manual Gain Control, ALC and Modulation Techniques
- 200°C Capable Plastic Package
- RoHS pliant
- 2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel
- 2 in Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel
- 450 MHz, 10 W, 50 V LATERAL N
- CHANNEL BROADBAND RF POWER MOSFETs
- 2 PLASTIC MRF6V2010NR1