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MRF6V2010NBR1 - RF Power Field Effect Transistor

Description

95 Ω, 100 MHz Long Ferrite Beads 1000 pF Chip Capacitors 10 μF, 35 V Tantalum Capacitor 22 μF, 35 V Tantalum Capacitor 39 K pF Chip Capacitors 22 K pF Chip Capacitors 0.1 μF Chip Capacitors 2.2 μF, 50 V Chip Capacitors 0.6 - 4.5 pF Variable Capacitor, Gigatrim 12 pF Chip Capacitor 470 μF, 63 V Elect

Features

  • Integrated ESD Protection.
  • Excellent Thermal Stability.
  • Facilitates Manual Gain Control, ALC and Modulation Techniques.
  • 200°C Capable Plastic Package.
  • RoHS Compliant.
  • TO - 270 - 2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.
  • TO - 272 - 2 in Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel. MRF6V2010NR1 MRF6V2010NBR1 10 - 450 MHz, 10 W, 50 V.

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Full PDF Text Transcription

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Freescale Semiconductor Technical Data Document Number: MRF6V2010N Rev. 1, 5/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFETs Designed primarily for CW large - signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications. • Typical CW Performance at 220 MHz: VDD = 50 Volts, IDQ = 30 mA, Pout = 10 Watts Power Gain — 23.9 dB Drain Efficiency — 62% • Capable of Handling 10:1 VSWR, @ 50 Vdc, 220 MHz, 10 Watts CW Output Power Features • Integrated ESD Protection • Excellent Thermal Stability • Facilitates Manual Gain Control, ALC and Modulation Techniques • 200°C Capable Plastic Package • RoHS Compliant • TO - 270 - 2 in Tape and Reel.
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