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MRFE6P3300HR5 - RF Power Field Effect Transistor

Download the MRFE6P3300HR5 datasheet PDF. This datasheet also covers the MRFE6P3300HR3 variant, as both devices belong to the same rf power field effect transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

Ferrite Beads, Short 1.0 μF, 50 V Tantulum Chip Capacitors 0.1 μF, 50 V Chip Capacitors 1000 pF Chip Capacitors 100 pF Chip Capacitors 8.2 pF Chip Capacitors 9.1 pF Chip Capacitor 1.8 pF Chip Capacitor 47 μF, 50 V Electrolytic Capacitors 470 μF, 63 V Electrolytic Capacitors 22 pF Chip Capacitors 50

Key Features

  • Characterized with Series Equivalent Large - Signal Impedance Parameters.
  • Internally Matched for Ease of Use.
  • Designed for Push - Pull Operation Only.
  • Qualified Up to a Maximum of 32 VDD Operation.
  • Integrated ESD Protection.
  • RoHS Compliant.
  • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. R5 Suffix = 50 Units per 56 mm, 13 inch Reel. MRFE6P3300HR3 MRFE6P3300HR5 860 MHz, 300 W, 32 V.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MRFE6P3300HR3_FreescaleSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by Freescale Semiconductor (now NXP Semiconductors)

Part Number Description
MRFE6P3300HR3 RF Power Field Effect Transistor
MRFE6S9045NR1 RF Power FET
MRFE6S9060NR1 RF Power FET
MRFE6S9125NBR1 N-Channel Enhancement-Mode Lateral MOSFETs
MRFE6S9125NR1 N-Channel Enhancement-Mode Lateral MOSFETs

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Freescale Semiconductor Technical Data Document Number: MRFE6P3300H Rev. 0, 5/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this device make it ideal for large - signal, common - source amplifier applications in 32 volt analog or digital television transmitter equipment. • Typical Narrowband Two - Tone Performance @ 860 MHz: VDD = 32 Volts, IDQ = 1600 mA, Pout = 270 Watts PEP Power Gain — 20.4 dB Drain Efficiency — 44.8% IMD — - 28.