MRFE6P3300HR5 Description
Freescale Semiconductor Technical Data Document Number: 0, 5/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband mercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this device make it ideal for large - signal, mon - source amplifier applications in 32 volt analog or digital television transmitter...
MRFE6P3300HR5 Key Features
- Characterized with Series Equivalent Large
- Signal Impedance Parameters
- Internally Matched for Ease of Use
- Designed for Push
- Pull Operation Only
- Qualified Up to a Maximum of 32 VDD Operation
- Integrated ESD Protection
- RoHS pliant
- In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. R5 Suffix = 50 Units per 56 mm, 13 inch Reel
- CHANNEL RF POWER MOSFET