MRFE6P3300HR5 Datasheet PDF - Freescale Semiconductor RF Power Field Effect Transistor Specs

MRFE6P3300HR5 - RF Power Field Effect Transistor

This page provides the datasheet information for the MRFE6P3300HR5, a member of the MRFE6P3300HR3 RF Power Field Effect Transistor family.

Datasheet Summary

Description

Ferrite Beads, Short 1.0 μF, 50 V Tantulum Chip Capacitors 0.1 μF, 50 V Chip Capacitors 1000 pF Chip Capacitors 100 pF Chip Capacitors 8.2 pF Chip Capacitors 9.1 pF Chip Capacitor 1.8 pF Chip Capacitor 47 μF, 50 V Electrolytic Capacitors 470 μF, 63 V Electrolytic Capacitors 22 pF Chip Capacitors 50

Features

Characterized with Series Equivalent Large - Signal Impedance Parameters.
Internally Matched for Ease of Use.
Designed for Push - Pull Operation Only.
Qualified Up to a Maximum of 32 VDD Operation.
Integrated ESD Protection.
RoHS Compliant.
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. R5 Suffix = 50 Units per 56 mm, 13 inch Reel. MRFE6P3300HR3 MRFE6P3300HR5 860 MHz, 300 W, 32 V.

Datasheet Details

Part number	MRFE6P3300HR5
Manufacturer	Freescale Semiconductor
File Size	448.23 KB
Description	RF Power Field Effect Transistor
Datasheet	MRFE6P3300HR5 Datasheet
Additional preview pages of the MRFE6P3300HR5 datasheet.

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Full PDF Text Transcription

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Freescale Semiconductor Technical Data Document Number: MRFE6P3300H Rev. 0, 5/2007 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this device make it ideal for large - signal, common - source amplifier applications in 32 volt analog or digital television transmitter equipment. • Typical Narrowband Two - Tone Performance @ 860 MHz: VDD = 32 Volts, IDQ = 1600 mA, Pout = 270 Watts PEP Power Gain — 20.4 dB Drain Efficiency — 44.8% IMD — - 28.

Published: Jul 6, 2007 |