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2SD1119 - NPN Transistor

Features

  • Low collector-emitter saturation voltage VCE(sat).
  • Satisfactory operation performances at high efficiency with the low voltage power supply. Maximum Ratings (Ta=25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power dissipation Storage Temperature unless otherwise noted) Symbol Value VCBO 40 VCEO 25 VEBO 7 IC 3 PC 0.75 Tstg -55to +150 Unit V V V A W.

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Datasheet Details

Part number 2SD1119
Manufacturer HOTTECH
File Size 157.61 KB
Description NPN Transistor
Datasheet download datasheet 2SD1119 Datasheet
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Plastic-Encapsulate Transistors FEATURES • Low collector-emitter saturation voltage VCE(sat) • Satisfactory operation performances at high efficiency with the low voltage power supply. Maximum Ratings (Ta=25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power dissipation Storage Temperature unless otherwise noted) Symbol Value VCBO 40 VCEO 25 VEBO 7 IC 3 PC 0.
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