Part number:
BB502M
Manufacturer:
Hitachi
File Size:
65.02 KB
Description:
Build in biasing circuit mos fet ic uhf/vhf rf amplifier.
* Build in Biasing Circuit; To reduce using parts cost & PC board space. Low noise; NF = 1.6 dB typ. at f = 900 MHz High gain; PG = 22 dB typ. at f = 900 MHz Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.
BB502M
Hitachi
65.02 KB
Build in biasing circuit mos fet ic uhf/vhf rf amplifier.
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