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2SC2655 Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon NPN Pow Transistor.

General Description

·Silicon NPN epitaxial type ·Low saturation voltage ·Complementary to 2SA1020 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Power switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 2 A 0.9 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC2655 isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark isc Silicon NPN Pow Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 1A ;

IB= 50mA VBE(sat) Base-Emitter Saturation Voltage IC= 1A ;

IB= 50mA ICBO Collector Cutoff Current VCB= 50V;

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