2SD130 Overview
·DC Current Gain -hFE = 15(Min)@ IC= 3A ·Collector-Emitter Breakdown Voltage- : V(BR) CEO= 60V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose amplifier and switching applications. 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD130 TC=25℃ unless otherwise specified SYMBOL...
