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2SD1804-T Datasheet NPN Transistor

Manufacturer: Inchange Semiconductor

General Description

·Excellent linearity of hFE ·Low collector-to-emitter saturation voltage ·Fast switching speed ·Complementary to 2SB1204 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Relay drivers, high-speed inverters , converters and Other general high current switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous Collector Power Dissipation PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 8 A 1 W 20 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1804L-T ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVCBO BVCEO Collector-Base Voltage Collector-Emitter Voltage Breakdown IC=0.1mA;

IE=0 Breakdown IC=1mA;

RBE=∞ BVEBO Emitter-Base Breakdown Voltage IE=0.1mA;IC=0 VCE(sat) Collector-Emitter Saturation Voltage IC=4A;

Overview

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1804-T.