2SD862 Overview
·High Collector Current-IC= 2A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 20V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high frequency, Low Vce(sat) middle power transistors in a plastic envelope, primarily for use in audio and general purpose applications. 1 isc & iscsemi is registered...