Datasheet4U Logo Datasheet4U.com

2SD862 - NPN Transistor

General Description

High Collector Current-IC= 2A Collector-Emitter Breakdown Voltage- : V(BR)CEO= 20V(Min) Good Linearity of hFE Low Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high frequency, Low Vce(sat)

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SD860 Power Transistor Inchange Semiconductor
2SD861 Silicon NPN Transistor Inchange Semiconductor
2SD863 PNP/NPN Epitaxial Planar Silicon Transistors Sanyo Semicon Device
2SD864 Power Transistor Inchange Semiconductor
2SD866 SILICON POWER TRANSISTOR SavantIC

Other Datasheets by Inchange Semiconductor

Part Number Description
2SD866 NPN Transistor
2SD867 NPN Transistor
2SD868 NPN Transistor
2SD869 NPN Transistor
2SD800 NPN Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD862 DESCRIPTION ·High Collector Current-IC= 2A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 20V(Min) ·Good Linearity of hFE ·Low Saturation Voltage ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high frequency, Low Vce(sat) middle power transistors in a plastic envelope, primarily for use in audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 2 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.