IXXH50N60B3D1 Datasheet (IXYS) - Extreme Light Punch Through IGBT

IXXH50N60B3D1 - Extreme Light Punch Through IGBT

XPTTM 600V IGBT GenX3TM w/ Diode IXXH50N60B3D1 Extreme Light Punch Through IGBT for 5-30kHz Switching Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM IA EAS SSOA (RBSOA) tsc (SCSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M Continuous Transient TC = 25°C( Chip Capability) TC = 110°C TC = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE = 15V, TVJ = 150°C, RG = 5 Clamped Inductive Load VGE = 15V, VCE = 360V, TJ = 150°C RG = 22, Non Repeti

IXXH50N60B3D1 Features

* Optimized for 5-30kHz Switching

* Square RBSOA

* Anti-Parallel Ultra Fast Diode

* Avalanche Capability

* Short Circuit Capability

* International Standard Package Advantages

* High Power Density

* 175°C Rated

* Extremely Rugged

* Low Gate Drive Requirement A

IXXH50N60B3D1 Datasheet - IXYS

IXXH50N60B3D1 - Extreme Light Punch Through IGBT

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