* z Optimized for 5-30kHz Switching z Square RBSOA z Anti-Parallel Ultra Fast Diode z Avalanche Capability z Short Circuit Capability z International Standard Package Advantages z High Power Density z 175°C Rated z Extremely Rugged z Low Gate Drive Requirement Applications z Power Inverters z UPS z Mo
IXXH75N60B3D1 Datasheet (193.14 KB)
IXXH75N60B3D1
IXYS
193.14 KB
Extreme light punch through igbt.
XPTTM 600V IGBT GenX3TM w/ Diode IXXH75N60B3D1 Extreme Light Punch Through IGBT for 5-30 kHz Switching Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 .
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