* Silicon Chip on Direct-Copper Bond (DCB) Substrate
* Isolated Mounting Surface
* 2500V~ Electrical Isolation
* Optimized for 10-30kHz Switching
* Square RBSOA
* Short Circuit Capability
* Anti-Parallel Sonic Diode
* High Current Handling Capability Advantages
IXXR110N65B4H1 Datasheet (274.99 KB)
IXXR110N65B4H1
IXYS
274.99 KB
650v igbt.
XPTTM 650V GenX4TM IXXR110N65B4H1 w/ Sonic Diode (Electrically Isolated Tab) Extreme Light Punch Through IGBT for 10-30kHz Switching VCES = 650V IC1.
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