300 -55 ... +150 150 -55 ... +150 W °C °C °C °C International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Sw.

Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3 mA VDSS .

IXFH15N80Q

IXFH15N100

IXFH15N100P

IXFH15N100Q

IXFH15N100Q3

IXFH15N60

IXFH15N65

IXFH150N15P

IXFH150N17T

IXFH150N17T2

IXFH150N20T

IXFH100N25P

IXFH102N15T

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