IXFP130N10T Overview
Preliminary Technical Information TrenchTM HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrisic Diode IXFA130N10T IXFP130N10T Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL TSOLD FC Md Weight Test Conditions TJ.
IXFP130N10T Key Features
- Ultra-Low On Resistance
- Avalanche Rated
- Low Package Inductance
- Easy to Drive and to Protect
- 175C Operating Temperature
- Fast Intrinsic Diode
- Easy to Mount
- Space Savings
- High Power Density
