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HiPerFETTM Power MOSFETs
Single MOSFET Die
IXFX 90N30 IXFK 90N30
VDSS ID25
RDS(on)
= 300 V = 90 A = 33 mΩ
trr ≤ 250 ns
Symbol VDSS VDGR VGS VGSM ID25 ID104 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC TC TC TC = 25°C (MOSFET chip capability) = 104°C (External lead capability) = 25°C, pulse width limited by TJM = 25°C
Maximum Ratings 300 300 ± 20 ± 30 90 75 360 90 64 3 5 560 -55 ... +150 150 -55 ... +150 V V V V A A A A mJ J V/ns W °C °C °C °C Nm/lb.in. 6 10 g g
PLUS 247TM
G
(TAB) D
TO-264 AA (IXFK)
G
TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS TJ ≤ 150°C, RG = 2 Ω TC = 25°C
D
(TAB)
S
G = Gate S = Source
D = Drain TAB = Drain
1.6 mm (0.063 in.
IXFX90N30 Datasheet
