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Inchange Semiconductor

3DD4204D Datasheet Preview

3DD4204D Datasheet

Silicon NPN Power Transistor

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INCHANGE Semiconductor
Silicon NPN Power Transistor
Product Specification
3DD4204D
DESCRIPTION
·High Voltage Capability
·High Speed Switching
·Wide Area of Safe Operation
APPLICATIONS
·Fluorescent lamp
·Electronic ballast
·Electronic transformer
·Switch mode power supply
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
700 V
VCEO
Collector-Emitter Voltage
400 V
VEBO
Emitter-Base Voltage
9V
IC Collector Current-Continuous
PC
Collector Power Dissipation
@TC=25
Tj Junction Temperature
Tstg Storage Temperature
3A
30 W
150
-65~150
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




Inchange Semiconductor

3DD4204D Datasheet Preview

3DD4204D Datasheet

Silicon NPN Power Transistor

No Preview Available !

INCHANGE Semiconductor
Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ;IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC=1mA,IB=0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA ;IC= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 0.5A; IB= 0.1A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 1.5A; IB= 0.5A
VBE(sat) Base-Emitter Saturation Voltage
IC= 1A; IB= 0.25A
ICBO Collector Cutoff Current
VCB= 700V; IE= 0
ICEO Collector Cutoff Current
VCE= 400V; IB= 0
hFE-1
DC Current Gain
IC= 5mA ; VCE= 5V
hFE-2
DC Current Gain
IC= 0.5A ; VCE= 5V
Switching Times
ts Storage Time
tf Fall Time
IC= 2A; IB1=-IB2=0.4A
Product Specification
3DD4204D
MIN TYP MAX UNIT
400 V
700 V
9V
0.8 V
2.0 V
1.6 V
100 μA
50 μA
6 40
8 21 40
4.0 μs
0.7 μs
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark


Part Number 3DD4204D
Description Silicon NPN Power Transistor
Maker Inchange Semiconductor
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3DD4204D Datasheet PDF






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