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IRF60B217 - IR MOSFET

Features

  • 20 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature (°C) Fig 16. Maximum Avalanche Energy vs. Temperature Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www. irf. com) 1.Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and wav.

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Datasheet Details

Part number IRF60B217
Manufacturer Infineon
File Size 227.50 KB
Description IR MOSFET
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Application  Brushed Motor drive applications  BLDC Motor drive applications Battery powered circuits  Half-bridge and full-bridge topologies  Synchronous rectifier applications  Resonant mode power supplies  OR-ing and redundant power switches  DC/DC and AC/DC converters  DC/AC Inverters  D G S Benefits  Improved Gate, Avalanche and Dynamic dV/dt Ruggedness  Fully Characterized Capacitance and Avalanche SOA  Enhanced body diode dV/dt and dI/dt Capability  Lead-Free*  RoHS Compliant, Halogen-Free G Gate IR MOSFET StrongIRFET™ IRHEFXF6E0TB® P2o1we7r MOSFET VDSS RDS(on) typ. max ID 60V 7.3m 9.
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