PTVA093002TC
PTVA093002TC is Thermally-Enhanced High Power RF LDMOS FET manufactured by Infineon.
Description
The PTVA093002TC is a 300-watt LDMOS FET. Designed for use in multi-standard cellular power amplifier applications, it can be used as single-ended or in a Doherty configuration. It features dual-path design, input matching, and a thermally-enhanced surface-mount package. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability.
PTVA093002TC Package H-49248H-4, formed leads
Peak/Average Ratio, Gain (d B) Efficiency (%)
Single-carrier 3GPP WCDMA
VDD = 50 V, IDQ = 400 m A, ƒ = 758 MHz 3.84 MHz bandwidth, 10 d B PAR
20 Gain
Efficiency
60 40 20
12 0
8 PAR @ 0.01% CCDF
-20 -40
0 25 a093002tc-gr1a
-60
30 35 40 45 50 55
Average Output Power (d Bm)
Features
- Typical CW performance in a bined-lead 50-ohm single-ended fixture, 780 MHz, 50 V
- Output power at P1d B = 158 W
- Gain = 18.2 d B
-...
