PTVA093002TC - Thermally-Enhanced High Power RF LDMOS FET

Infineon

Datasheet Details

Part number	PTVA093002TC
Manufacturer	Infineon ↗
File Size	203.67 KB
Description	Thermally-Enhanced High Power RF LDMOS FET
Datasheet	PTVA093002TC-Infineon.pdf

The PTVA093002TC is a 300-watt LDMOS FET.

dual-path design, input matching, and a thermally-enhanced surface-mount package. Manufactured with Inﬁneon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTVA093002TC Package H-49248H-4, formed leads Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier 3GPP WCDMA VDD = 50 V, IDQ = 400 mA, ƒ = 758 MHz 3.84 MHz bandwidth, 10 dB PAR 24 20 Gain 16 Efficiency 60 40 20 12 0 8 PAR @ 0.01% CCDF 4 -20 -40 0 25 a093002tc-gr1a -60.

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Published: Nov 27, 2016 |