Datasheet4U Logo Datasheet4U.com

ITCH16180B4E, ITCH16180B4 - High Power RF LDMOS FET

The ITCH16180B4E by Innogration is a High Power RF LDMOS FET. Below is the official datasheet preview.

📥 Download Datasheet

Official preview page of the ITCH16180B4E High Power RF LDMOS FET datasheet (Innogration).

Datasheet Details

Part number ITCH16180B4E, ITCH16180B4
Manufacturer Innogration
File Size 1.12 MB
Description High Power RF LDMOS FET
Datasheet download datasheet ITCH16180B4-Innogration.pdf
Note This datasheet PDF includes multiple part numbers: ITCH16180B4E, ITCH16180B4.
Please refer to the document for exact specifications by model.
Additional preview pages of the ITCH16180B4E datasheet.

ITCH16180B4E Product details

Description

The ITCH16180B4 is a 180-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1300 to 1600 MHz. Typical Class AB Performance of Single Section (On Test Fixture with device soldered): VDD = 28 Volts, IDQ = 700 mA, Pulse CW, Pulse Width=12 us, Duty cycle=10% .

Features

📁 ITCH16180B4E Similar Datasheet

  • ITC008 - Technical Traing Manual (Thomson)
  • ITC1000 - Pulsed Avionics (GHz Technology)
  • ITC1100 - Common base bipolar transistor (GHz Technology)
  • ITC117 - Integrated Telecom Circuits (Clare Inc.)
  • ITC117P - Integrated Telecom Circuits (Clare Inc.)
  • ITC117PL - Integrated Telecom Circuits (IXYS)
  • ITC135P - Integrated Telecom Circuits (Clare Inc.)
  • ITC137P - Integrated Telecom Circuits (Clare Inc.)
Other Datasheets by Innogration
Published: |