Datasheet Details
| Part number | ITCH16180B4E |
|---|---|
| Manufacturer | Innogration |
| File Size | 1.12 MB |
| Description | High Power RF LDMOS FET |
| Download | ITCH16180B4E Download (PDF) |
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Overview: Innogration (Suzhou) Co., Ltd. Document Number: ITCH16180B4 Product Datasheet V2.
Download the ITCH16180B4E datasheet PDF. This datasheet also includes the ITCH16180B4 variant, as both parts are published together in a single manufacturer document.
| Part number | ITCH16180B4E |
|---|---|
| Manufacturer | Innogration |
| File Size | 1.12 MB |
| Description | High Power RF LDMOS FET |
| Download | ITCH16180B4E Download (PDF) |
|
|
|
The ITCH16180B4 is a 180-watt, internally matched LDMOS FET, designed for multicarrier WCDMA/PCS/DCS/LTE base station and ISM applications with frequencies from 1300 to 1600 MHz.
Four leads can be configured as single ended, 180 degree push-pull or 90 degree hybrid or Doherty with proper external match network.
ITCH16180B4 Typical Class AB Performance of Single Section (On Test Fixture with device soldered): VDD = 28 Volts, IDQ = 700 mA, Pulse CW, Pulse Width=12 us, Duty cycle=10% .
| Part Number | Description |
|---|---|
| ITCH16180B4 | High Power RF LDMOS FET |
| ITCH16180B2 | High Power RF LDMOS FET |
| ITCH16180B2E | High Power RF LDMOS FET |
| ITCH16045A2 | High Power RF LDMOS FET |
| ITCH16045A2E | High Power RF LDMOS FET |
| ITCH16230B2 | High Power RF LDMOS FET |
| ITCH16230B2E | High Power RF LDMOS FET |
| ITCH15401D4 | High Power RF LDMOS FET |
| ITCH18180B4 | High Power RF LDMOS FET |
| ITCH18180B4E | High Power RF LDMOS FET |