• Low Input Capacitance: 2.0pF Typical
• Low Gate Leakage: 0.5pA Typical
• High Breakdown Voltage: -60V Typical
• High Input Impedance
• Small Die: 365um X 365um X 203um
• Bond Pads: 90um X 90um
• Substrate Connected to Gate
• Au Back-Side Finish
Applications
• Small Signal Amplifier
• Ultrahigh Imp.