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N0001H Datasheet - InterFET

Process Geometry

N0001H Features

* Low Input Capacitance: 2.0pF Typical

* Low Gate Leakage: 0.5pA Typical

* High Breakdown Voltage: -60V Typical

* High Input Impedance

* Small Die: 365um X 365um X 203um

* Bond Pads: 90um X 90um

* Substrate Connected to Gate

* Au Back-S

N0001H General Description

The InterFET N0001H Geometry is targeted high impedance low leakage applications. The low input capacitance makes it ideal for high frequency applications. Geometry Top View 01 G S-D S-D G Test Pattern Standard Parts * 2N4117/A, 2N4118/A, 2N4119/A * PAD1, PAD2, PAD5, PAD10

N0001H Datasheet (569.49 KB)

Preview of N0001H PDF

Datasheet Details

Part number:

N0001H

Manufacturer:

InterFET

File Size:

569.49 KB

Description:

Process geometry.

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N0001H Process Geometry InterFET

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