N0014EU Datasheet - InterFET

Process Geometry

N0014EU Features

* Low Input Capacitance: 2.3pF Typical

* Low Gate Leakage: 1.5pA Typical

* High Breakdown Voltage: -30V Typical

* High Input Impedance

* Die Size: 482um X 482um X 203um

* Bond Pads: 90um Diameter

* Substrate Connected to Gate

* Au Back

N0014EU General Description

The InterFET N0014EU Geometry is targeted for low noise high gain amplifier applications. The low input capacitance makes it ideal for higher frequency applications. Geometry Top View S-D S-D NC D 14EU Note: Gate connected to backside metal Connection Configuration Diode Gate Source-Drain .

N0014EU Datasheet (399.36 KB)

N0014EU Datasheet Preview — Preview of N0014EU PDF

Datasheet Details

Part number:

N0014EU

Manufacturer:

InterFET

File Size:

399.36 KB

Description:

Process geometry.

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N0014EU Process Geometry InterFET

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N0014EU Features

N0014EU General Description

Datasheet Details

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