IRF6617TR1 Datasheet - International Rectifier

HEXFET Power MOSFET

IRF6617TR1 Features

* river Gate Drive + P.W. Period D= P.W. Period VGS=10V

* + Circuit Layout Considerations

* Low Stray Inductance

* Ground Plane

* Low Leakage Inductance Current Transformer

* D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. V

IRF6617TR1 General Description

The IRF6617 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used.

IRF6617TR1 Datasheet (170.61 KB)

IRF6617TR1 Datasheet Preview — Preview of IRF6617TR1 PDF

Datasheet Details

Part number:

IRF6617TR1

Manufacturer:

International Rectifier

File Size:

170.61 KB

Description:

Hexfet power mosfet.
PD - 95847 IRF6617 l l l l l l l Application Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses Low Pro.

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IRF6617TR1 HEXFET Power MOSFET International Rectifier

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IRF6617TR1 Features

IRF6617TR1 General Description

Datasheet Details

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Description:

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