IRFB11N50A - Power MOSFET

Features

M E A S U R E M E N T S D O N O T IN C L U D E B U R R S . Part Marking Information TO-220AB E XA M P LE : TH IS IS A N IR F 1 0 1 0 W ITH A S S E M B L Y L OT C O D E 9 B 1 M A IN T E R N A T IO N A L R E C TIFIE R LOGO A SS E MB LY LOT COD E P A RT NU M B ER IR F 1 0 10 9246 9B 1M D A TE C O D E (Y Y W W ) YY = YE A R W W = W E EK Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ).
Pulse width ≤ 300µs; duty cycle ≤ 2%. Coss eff. is.

IRFB11N50A Power MOSFET by International Rectifier - Datasheet Preview — Datasheet preview – IRFB11N50A

Datasheet Details

Part number	IRFB11N50A
Manufacturer	International Rectifier (now Infineon)
File Size	100.63 KB
Description	Power MOSFET
Datasheet	IRFB11N50A Datasheet
Additional preview pages of the IRFB11N50A datasheet.

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Full PDF Text Transcription

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PD- 91809B SMPS MOSFET IRFB11N50A HEXFET® Power MOSFET Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current VDSS 500V Rds(on) max 0.

Published: Apr 16, 2005 |