of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower o.

operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power su.

The HGTG15N120C3, HGTP15N120C3, HGT1S15N120C3 and HGT1S15N120C3S are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state.

HGTG15N120C3D

HGTG10N120BN

HGTG10N120BND

HGTG11N120CN

HGTG11N120CND

HGTG12N60A4

HGTG12N60A4D

HGTG12N60B3

HGTG12N60B3D

HGTG12N60C3D

HGTG12N60D1

HGTG12N60D1D

HGTG18N120BN