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IRFR220 - N-Channel Power MOSFETs

This page provides the datasheet information for the IRFR220, a member of the IRFU220 N-Channel Power MOSFETs family.

Features

  • 4.6A, 200V.
  • rDS(ON) = 0.800Ω.
  • Single Pulse Avalanche Energy Rated.
  • SOA is Power Dissipation Limited.
  • Nanosecond Switching Speeds.
  • Linear Transfer Characteristics.
  • High Input Impedance.
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER IRFR220 IRFU220.

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Full PDF Text Transcription

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IRFR220, IRFU220 Data Sheet July 1999 File Number 2410.2 4.6A, 200V, 0.800 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA9600. Features • 4.6A, 200V • rDS(ON) = 0.
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