VDSS=650V, ID=4A Drain-Source ON Resistance : RDS(ON)=3.0 @VGS = 10V Qg(typ.)=20nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC RATING SYMBOL UNIT KHB4D0N65P KHB4D0N65F .

This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switch mode power supplies. FEATURES VDSS=650V, ID=4A Drain-Sourc.

KHB4D0N65F

KHB4D0N80F1

KHB4D0N80F2

KHB4D0N80P1

KHB4D5N60F

KHB4D5N60F2

KHB4D5N60P

KHB011N40F1

KHB011N40F2

KHB011N40P1

KHB019N20F1

KHB019N20F2

KHB019N20P1