LPM9029C Datasheet - Lowpowersemi

N and P-Channel Enhancement Power MOSFET

LPM9029C Features

* Trench Technology

* NMOS: VNDS=20V, IND=12A RNDS(ON) < 26mΩ @ VGS=2.5V RNDS(ON) < 20mΩ @ VGS=4.5V

* PMOS: VPDS=-20V, IPD=-4.5A RPDS(ON) < 100mΩ @ VGS=-2.5V RPDS(ON) < 68mΩ @ VGS=-4.5V

* Super high density cell design

* Extremely Low Threshold Voltage

* Small package SOP-8 A

LPM9029C General Description

The LPM9029C integrates N-Channel and P-Channel enhancement MOSFET Transistor. It uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for using in DC-DC conversion, power switch and charging circuit. Standard Product LPM9029C is Pb-f.

LPM9029C Datasheet (450.37 KB)