LPM9435 Description
The LPM9435 is the P-channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook puter power management and other battery powered circuits where high side switching.
LPM9435 Key Features
- 30V/-5.8A,RDS(ON)=42mΩ(typ.)@VGS=-10V
- 30V/-4.0A,RDS(ON)=65mΩ(typ.)@VGS=-4.5V
- Super high density cell design for extremely
- SOP8 Package