LPM9017 transistor equivalent, p-channel enhancement mode field effect transistor.
* -30V/-4A,RDS(ON)＜58mΩ(typ.)@VGS=-10V
* -30V/-3.0A,RDS(ON)＜68mΩ(typ.)@VGS=-4.5V
* Super high density cell design for extremely
low RDS(ON)
* SOT23 Packag.
* Portable Media Players
* Cellular and Smart mobile phone
* LCD
* DSC Sensor
* Wireless Card
Mark.
The LPM9017 is the P-channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are parti.
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