LPM9017 Datasheet PDF (P-Channel Enhancement Mode Field Effect Transistor)

LPM9017 - P-Channel Enhancement Mode Field Effect Transistor

Description

The LPM9017 is the P-channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

-30V/-4A,RDS(ON)＜58mΩ(typ. )@VGS=-10V.
-30V/-3.0A,RDS(ON)＜68mΩ(typ. )@VGS=-4.5V.
Super high density cell design for extremely low RDS(ON).
SOT23 Package.

Datasheet Details

Part number	LPM9017
Manufacturer	Lowpowersemi
File Size	787.15 KB
Description	P-Channel Enhancement Mode Field Effect Transistor
Datasheet	LPM9017 Datasheet
Additional preview pages of the LPM9017 datasheet.

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Full PDF Text Transcription

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Preliminary Datasheet LPM9017 LPM9017 - -30V/4A P-Channel Enhancement Mode Field Effect Transistor General Description The LPM9017 is the P-channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, notebook computer power management and other battery powered circuits where high-side switching. Ordering Information LPM9017- □ □ □ F: Pb-Free Package Type B3: SOT23 Features ■ -30V/-4A,RDS(ON)＜58mΩ(typ.)@VGS=-10V ■ -30V/-3.0A,RDS(ON)＜68mΩ(typ.)@VGS=-4.

Published: Sep 14, 2018 |