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LPM9007 Datasheet 30V/4A P-Channel Enhancement Mode Field Effect Transistor

Manufacturer: Lowpowersemi

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Datasheet Details

Part number LPM9007
Manufacturer Lowpowersemi
File Size 665.61 KB
Description 30V/4A P-Channel Enhancement Mode Field Effect Transistor
Download LPM9007 Download (PDF)

General Description

The LPM9007 is the P-channel logic enhancement mode power field effect transistors are produced in using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage applications, notebook computer power management and other battery powered circuits where it is high-side switching.

Overview

Preliminary Datasheet LPM9007 30V/4A P-Channel Enhancement Mode Field Effect Transistor.

Key Features

  • -30V/-3.0A, RDC(ON)=52mΩ(typ. )@VGS=-4.5V.
  • -30V/-3.0A,RDC(ON)=80mΩ(typ. )@VGS=-2.5V.
  • Super high density cell design for extremely low RDC(ON).
  • SOT23 Package.

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