LPM9007 transistor equivalent, 30v/4a p-channel enhancement mode field effect transistor.
* -30V/-3.0A, RDC(ON)=52mΩ(typ.)@VGS=-4.5V
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* -30V/-3.0A,RDC(ON)=80mΩ(typ.)@VGS=-2.5V
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* Super high density cell design for extremely low
RDC(ON)
notebook computer power management and other battery powered circuits where it is high-side switching.
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The LPM9007 is the P-channel logic enhancement mode power field effect transistors are produced in using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are pa.
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