LPM9007
Description
The LPM9007 is the P-channel logic enhancement mode power field effect transistors are produced in using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.
Key Features
- -30V/-3.0A,RDC(ON)=80mΩ(typ.)@VGS=-2.5V;
- Super high density cell design for extremely low RDC(ON);
- SOT23 Package
