Datasheet4U Logo Datasheet4U.com

LPM9007 - 30V/4A P-Channel Enhancement Mode Field Effect Transistor

📥 Download Datasheet

Datasheet Details

Part number LPM9007
Manufacturer Lowpowersemi
File Size 665.61 KB
Description 30V/4A P-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet LPM9007 Datasheet

General Description

The LPM9007 is the P-channel logic enhancement mode power field effect transistors are produced in using high cell density, DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

These devices are particularly suited for low voltage applications, notebook computer power management and other battery powered circuits where it is high-side switching.

Overview

Preliminary Datasheet LPM9007 30V/4A P-Channel Enhancement Mode Field Effect Transistor.

Key Features

  • -30V/-3.0A, RDC(ON)=52mΩ(typ. )@VGS=-4.5V.
  • -30V/-3.0A,RDC(ON)=80mΩ(typ. )@VGS=-2.5V.
  • Super high density cell design for extremely low RDC(ON).
  • SOT23 Package.

More Datasheets from Lowpowersemi

Part Number Description
LPM9017 P-Channel Enhancement Mode Field Effect Transistor
LPM9021 Single P-Channel Power MOSFET
LPM9022 Dual N -Channel Enhancement Power MOSFET
LPM9024 Dual N -Channel Enhancement Power MOSFET
LPM9029C N and P-Channel Enhancement Power MOSFET
LPM9435 P-Channel Enhancement Mode Field Effect Transistor
LPM3401 15V/4A P-Channel Enhancement Mode Field Effect Transistor
LPM3413 P-Channel Enhancement Mode Field Effect Transistor
LPM3414 20V/3A N-Channel Enhancement Mode Field Effect Transistor
LPM4953 Dual P -Channel Enhancement Power MOSFET