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LPM9007 Datasheet - Lowpowersemi

30V/4A P-Channel Enhancement Mode Field Effect Transistor

LPM9007 Features

* -30V/-3.0A, RDC(ON)=52mΩ(typ.)@VGS=-4.5V

* -30V/-3.0A,RDC(ON)=80mΩ(typ.)@VGS=-2.5V

* Super high density cell design for extremely low RDC(ON)

* SOT23 Package Applications

* Portable Media Players

* Cellular and Smart mobile phone

* LCD

* DSC Senso

LPM9007 General Description

The LPM9007 is the P-channel logic enhancement mode power field effect transistors are produced in using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications, no.

LPM9007 Datasheet (665.61 KB)

Preview of LPM9007 PDF

Datasheet Details

Part number:

LPM9007

Manufacturer:

Lowpowersemi

File Size:

665.61 KB

Description:

30v/4a p-channel enhancement mode field effect transistor.

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LPM9007 30V P-Channel Enhancement Mode Field Effect Transistor Lowpowersemi

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