CGHV40180F hemt equivalent, gan hemt.
* Up to 2.0 GHz Operation
* 24 dB Small Signal Gain at 900 MHz
* 20 dB Power Gain at 900 MHz
* 250 W Typical Output Power at 900 MHz
* 75% Efficiency .
GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGHV40180F ideal for linear and c.
The CGHV40180F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV40180F, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer.
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