CGHV40180P - 18W GaN HEMT

Description

The CGHV40180P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).

The CGHV40180P, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications.

Features

Up to 2.0 GHz operation.
24 dB small signal gain at 900 MHz.
20 dB power gain at 900 MHz.
250 W typical output power at 900 MHz.
75% efficiency at PSAT.

MACOM Technology Solutions

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CGHV40180P 18w gan hemt by MACOM - Datasheet Preview

Datasheet Details

Part number	CGHV40180P
Manufacturer	MACOM Technology Solutions
File Size	654.52 KB
Description	18W GaN HEMT
Datasheet	CGHV40180P Datasheet

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Full PDF Text Transcription

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CGHV40180P 180 W, DC - 2.0 GHz, 50 V, GaN HEMT Description The CGHV40180P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV40180P, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain, and wide bandwidth capabilities making the CGHV40180P ideal for linear and compressed amplifier circuits. The transistor is available in a 2-lead pill package. Package Types: 440206 PN’s: CGHV40180P Features • Up to 2.

Published: May 9, 2024 |