| Title | RF Mosfet HEMT 50V 1A 2GHz 19.8dB 180W 440206 |
| Description | The CGHV40180P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV40180P, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain, and wide bandwidth capabilities making the CGHV40180P ideal for linear and compressed amplifier circuits. The transistor ... |
| Features |
• Up to 2.0 GHz operation • 24 dB small signal gain at 900 MHz • 20 dB power gain at 900 MHz • 250 W typical output power at 900 MHz • 75% efficiency at PSAT Applications • Military communications • Public safety VHF-UHF applications • Radar • Medical • Broadband amplifiers Typical Performance Over 800 MHz - 1000 MHz (TC = 25 °C), 50 V Parameter... |
| Datasheet |
 CGHV40180P Datasheet - 654.52KB |
| Distributor |
DigiKey |
| Stock | 0 In stock |
| Price |
50 units: 482172.6 KRW
|
| BuyNow |
 BuyNow - Manufacturer a MACOM CGHV40180P
|
| Distributor | Stock | Price | BuyNow |
|---|---|---|---|
DigiKey |
50 units: 482172.6 KRW |
BuyNow |
|
 Mouser Electronics |
50 units: 337 USD |
||
 Richardson RFPD |
1 units: 506.59 USD |
BuyNow |
