CGHV40180F GaN HEMT

MACOM

Description

CGHV40180F 180 W, DC - 2.0 GHz, 50 V, GaN HEMT .
The CGHV40180F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).

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Datasheet Specifications

Part number: CGHV40180F
Manufacturer: MACOM
File Size: 1.19 MB
Datasheet: CGHV40180F-MACOM.pdf
Description: GaN HEMT

Features

* Up to 2.0 GHz Operation
* 24 dB Small Signal Gain at 900 MHz
* 20 dB Power Gain at 900 MHz
* 250 W Typical Output Power at 900 MHz

Applications

* GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGHV40180F ideal for linear and compressed amplifier circuits. The transistor is available in a 2-lead flange package. Package Type: 440223 PN: CGHV40180F Typical Performance Over 800 MHz - 1000 MHz (TC = 25ºC),

CGHV40180F Distributors

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CGHV40180F GaN HEMT MACOM

MACOM CGHV40180F-like datasheet