CGHV40180F - GaN HEMT
The CGHV40180F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).
The CGHV40180F, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications.
GaN HEMTs offer high efficiency, high gain and wide bandwidth cap
CGHV40180F Features
* Up to 2.0 GHz Operation
* 24 dB Small Signal Gain at 900 MHz
* 20 dB Power Gain at 900 MHz
* 250 W Typical Output Power at 900 MHz
* 75% Efficiency at PSAT Applications
* Military Communications
* Public Safety VHF-UHF applications
