CGHV40180F Datasheet - MACOM

GaN HEMT

CGHV40180F Features

* Up to 2.0 GHz Operation

* 24 dB Small Signal Gain at 900 MHz

* 20 dB Power Gain at 900 MHz

* 250 W Typical Output Power at 900 MHz

* 75% Efficiency at PSAT Applications

* Military Communications

* Public Safety VHF-UHF applications

CGHV40180F General Description

The CGHV40180F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV40180F, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth cap.

CGHV40180F Datasheet (1.19 MB)

CGHV40180F Datasheet Preview — Preview of CGHV40180F PDF

Datasheet Details

Part number:

CGHV40180F

Manufacturer:

MACOM

File Size:

1.19 MB

Description:

Gan hemt.

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CGHV40180F GaN HEMT MACOM

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CGHV40180F Features

CGHV40180F General Description

Datasheet Details

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Description:

CGHV40180F Distributor