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CGHV40180F - GaN HEMT

MACOM

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Datasheet Details

Part number	CGHV40180F
Manufacturer	MACOM
File Size	1.19 MB
Description	GaN HEMT
Datasheet	CGHV40180F-MACOM.pdf

CGHV40180F Product details

Description

The CGHV40180F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).

Features

Up to 2.0 GHz Operation.
24 dB Small Signal Gain at 900 MHz.
20 dB Power Gain at 900 MHz.
250 W Typical Output Power at 900 MHz.
75% Efficiency at PSAT.

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Published: Dec 30, 2024 |