CGHV40180F Datasheet - MACOM

CGHV40180F GaN HEMT

The CGHV40180F is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGHV40180F, operating from a 50 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth cap.

CGHV40180F Features

* Up to 2.0 GHz Operation

* 24 dB Small Signal Gain at 900 MHz

* 20 dB Power Gain at 900 MHz

* 250 W Typical Output Power at 900 MHz

* 75% Efficiency at PSAT Applications

* Military Communications

* Public Safety VHF-UHF applications

CGHV40180F-MACOM.pdf

CGHV40180F Datasheet Preview — Preview of CGHV40180F PDF

Datasheet Details

Part number:

CGHV40180F

Manufacturer:

MACOM

File Size:

1.19 MB

Description:

Gan hemt.

📁 Related Datasheet

CGHV40180F GaN HEMT (Cree)

CGHV40180P 18W GaN HEMT (MACOM)

CGHV40100 100W GaN HEMT (MACOM)

CGHV40100 GaN HEMT (Cree)

CGHV40100 GaN HEMT (Wolfspeed)

CGHV40030 GaN HEMT (MACOM)

CGHV40030 GaN HEMT (Cree)

CGHV40030 GaN HEMT (Wolfspeed)

TAGS

CGHV40180F CGHV40180F GaN HEMT MACOM

CGHV40180F Distributor