Part number:
CGHV40100
Manufacturer:
Cree
File Size:
1.48 MB
Description:
Gan hemt.
CGHV40100
100 W, DC - 3.0 GHz, 50 V, GaN HEMT
Cree’s CGHV40100 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG.
* Up to 3 GHz Operation
* 100 W Typical Output Power
* 17.5 dB Small Signal Gain at 2.0 GHz
* Application Circuit for 0.5 - 2.5 GHz
* 55% Efficiency at PSAT
* 50 V Operation Large Signal Models Available for ADS & MWO Subject to change without
CGHV40100
Cree
1.48 MB
Gan hemt.
CGHV40100
100 W, DC - 3.0 GHz, 50 V, GaN HEMT
Cree’s CGHV40100 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CG.
📁 Related Datasheet
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100 W, DC - 3.0 GHz, 50 V, GaN HEMT
Description
The CGHV40100 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT.
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CGHV40030 - GaN HEMT
(Cree)
CGHV40030
30 W, DC - 6 GHz, 50 V, GaN HEMT
Description
Cree’s CGHV40030 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEM.
CGHV40030 - GaN HEMT
(Wolfspeed)
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30 W, DC - 6 GHz, 50 V, GaN HEMT
Description
Wolfspeed’s CGHV40030 is an unmatched, gallium nitride (GaN) high electron mobility transistor .
