Datasheet Specifications
- Part number
- CGHV40100
- Manufacturer
- Cree
- File Size
- 1.48 MB
- Datasheet
- CGHV40100-Cree.pdf
- Description
- GaN HEMT
Description
CGHV40100 100 W, DC - 3.0 GHz, 50 V, GaN HEMT Cree’s CGHV40100 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT).The CG.
Features
* Up to 3 GHz OperationApplications
* GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGHV40100 ideal for linear and compressed amplifier circuits. The transistor is available in a 2-lead flange and pill package. PPNac: CkaGgHeVT4y0p1e0s0: F44&0C19G3H&V4404100200P6 Typical Performance Over 500 MHCGHV40100 Distributors
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