CGHV40030 GaN HEMT

Cree

CGHV40030 Description

CGHV40030 30 W, DC - 6 GHz, 50 V, GaN HEMT .
Cree’s CGHV40030 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain.

CGHV40030 Features

* Up to 6 GHz Operation
* 30 W Typical Output Power

CGHV40030 Applications

* The datasheet specifications are based on a 0.96 - 1.4 GHz amplifier. The CGHV40030 operates on a 50 volt rail circuit while housed in a 2-lead flange or pill package. Typical Performance 0.96 - 1.4 GHz (TC = 25˚C), 50 V Parameter 0.96 GHz 1.1 GHz 1.25 GHz Gain @ PSAT Saturated Output Power

📥 Download Datasheet

CGHV40030 Datasheet Preview — Preview of CGHV40030 PDF

Datasheet Details

Part number: CGHV40030
Manufacturer: Cree
File Size: 2.29 MB
Datasheet: CGHV40030-Cree.pdf
Description: GaN HEMT

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