CGHV40030 GaN HEMT

Cree

Description

CGHV40030 30 W, DC - 6 GHz, 50 V, GaN HEMT .
Cree’s CGHV40030 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain.

📥 Download Datasheet

CGHV40030 Datasheet Preview — Preview of CGHV40030 PDF

Datasheet Specifications

Part number: CGHV40030
Manufacturer: Cree
File Size: 2.29 MB
Datasheet: CGHV40030-Cree.pdf
Description: GaN HEMT

Features

* Up to 6 GHz Operation
* 30 W Typical Output Power

Applications

* The datasheet specifications are based on a 0.96 - 1.4 GHz amplifier. The CGHV40030 operates on a 50 volt rail circuit while housed in a 2-lead flange or pill package. Typical Performance 0.96 - 1.4 GHz (TC = 25˚C), 50 V Parameter 0.96 GHz 1.1 GHz 1.25 GHz Gain @ PSAT Saturated Output Power

CGHV40030 Distributors

📁 Related Datasheet

CGHV40050 CGHV40100 CGHV40180P CGHV40200PP CGHV14500F CGHV14800F1

📌 All Tags

CGHV40030 GaN HEMT Cree

Cree CGHV40030-like datasheet