PTVA120251EA Datasheet | MACOM Technology Solutions

Description The PTVA120251EA LDMOS FET is designed for use in power amplifier applications in the 500 MHz to 1400 MHz frequency band. Features include high gain and a thermally-enhanced package with bolt-down flange. Manufactured with an advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Power Sweep, Pulsed RF VDD = 50 V, IDQ = 20 m A, TCASE = 25°C 300 µs pulse width, 12% duty cycle Efficiency Output Power (d Bm) Drain Efficiency (%) 50 45 40 35 30 50 Output Power 1200 MHz 1300 MHz 30 1400 MHz 1200 MHz 1300 Mhz 1400 MHz a120251ea-v2-gr1a``` Input Power (d Bm) PTVA120251EA Package H-36265-2 Features - Unmatched input and output - High gain and efficiency - Integrated ESD protection - ESD HBM Class 2, per ANSI/ESDA/JEDEC JS-001 - Low thermal resistance - Excellent ruggedness - Pb-free and Ro HS-pliant - Capable of withstanding a 10:1 load mismatch (all phase angles) at POUT = 25 W, under CW conditions RF Characteristics Typical RF Performance (not subject to production test, verified by design/characterization in the test fixture) VDD = 50 V, IDQ = 0.02 A, Input signal (tr = 5 ns, tf = 6.5 ns), 300 µs pulse width, 12% duty cycle, class AB test P1d B...