Description
The PTVA101K02EV LDMOS FET is designed for use in power amplifier applications in the 1030 MHz / 1090 MHz frequency band.
Features
- include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTVA101K02EV Package H-36275-4
Gain (dB) Drain Efficiency (%)
Power Sweep, Pulsed RF VDD = 50 V, IDQ = 150 mA, TCASE = 25°C
ƒ = 1030 MHz
26
128µs, 10%
22 128µs, 1%
MODE-S
18
60 50 40
14
Gain
10
30 20
6 10
Efficiency
2
a101k02ev_1-1
0
30 35 40 45 50 55 60 65
Pout (dBm)
Features.
PTVA101K02EV Datasheet
