Part number:
PTVA101K02EV
Manufacturer:
File Size:
423.74 KB
Description:
Thermally-enhanced high power rf ldmos fet.
* include high gain and thermally-enhanced package with bolt-down flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PTVA101K02EV Package H-36275-4 Gain (dB) Drain Efficiency (%) Power Sweep, Pulsed RF VDD = 50 V
PTVA101K02EV Datasheet (423.74 KB)
PTVA101K02EV
423.74 KB
Thermally-enhanced high power rf ldmos fet.
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